DocumentCode
945576
Title
13 μm wide stripe c.w. GaAs/GaAlAs d.h. lasers linear to more than 10 mW
Author
Lindstrom, C. ; Janson, M.
Author_Institution
Microwave Institute Foundation, Stockholm, Sweden
Volume
14
Issue
6
fYear
1978
Firstpage
172
Lastpage
174
Abstract
By using a very uniform device structure it has been possible to fabricate stripe contact d.h. GaAs/GaAlAs injection lasers with linear continuous output power exceeding 10 mW from one facet independent of stripe width in the range 10--14 μm. These results predict that there is no fundamental mechanism that gives a nonlinearity at a few milliwatts output power which could explain earlier published results, and that increased maximum linear output power could be achieved by further improving the uniformity of the device structure.
Keywords
III-V semiconductors; gallium arsenide; semiconductor junction lasers; GaAs-GaAlAs laser; linear continuous output power; stripe contact CW DH injection lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19780114
Filename
4240955
Link To Document