• DocumentCode
    945576
  • Title

    13 μm wide stripe c.w. GaAs/GaAlAs d.h. lasers linear to more than 10 mW

  • Author

    Lindstrom, C. ; Janson, M.

  • Author_Institution
    Microwave Institute Foundation, Stockholm, Sweden
  • Volume
    14
  • Issue
    6
  • fYear
    1978
  • Firstpage
    172
  • Lastpage
    174
  • Abstract
    By using a very uniform device structure it has been possible to fabricate stripe contact d.h. GaAs/GaAlAs injection lasers with linear continuous output power exceeding 10 mW from one facet independent of stripe width in the range 10--14 μm. These results predict that there is no fundamental mechanism that gives a nonlinearity at a few milliwatts output power which could explain earlier published results, and that increased maximum linear output power could be achieved by further improving the uniformity of the device structure.
  • Keywords
    III-V semiconductors; gallium arsenide; semiconductor junction lasers; GaAs-GaAlAs laser; linear continuous output power; stripe contact CW DH injection lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780114
  • Filename
    4240955