Electron mobilities and high-field drift velocities in strained silicon on silicon-germanium substrates

Author

Vogelsang, Thomas ; Hofmann, Karl Rudiger

Author_Institution

Siemens AG, Munich

Volume

39

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

2641

Lastpage

2642

Abstract

Summary form only given. The authors have performed a detailed analysis of the in-plane electron transport in strained Si on Si_1-xGe_x with a Monte Carlo method. They present data on electron drift mobilities and velocities in the whole range from low to very high electric fields that can serve as a reference for the transport in modulation-doped channels. The results demonstrate significant improvements of the in-plane electron drift velocity in strained Si on Si_1-xGe_x compared to bulk Si in the low-field and the high-field regions both at 300 and at 77 K. This advantage should contribute considerably to the high-performance potential of devices based on modulation-doped Si/SiGe heterostructures such as n-channel quantum-well MODFETs and MOSFETs

Keywords

Ge-Si alloys; Monte Carlo methods; carrier mobility; electrical conductivity of crystalline semiconductors and insulators; elemental semiconductors; high field effects; semiconductor materials; silicon; substrates; 300 K; 77 K; MODFETs; MOSFETs; Monte Carlo method; Si-SiGe; Si_1-xGe_x substrates; electric fields; electron drift mobilities; heterostructures; high-field drift velocities; in-plane electron transport; modulation-doped channels; n-channel quantum-well; strained Si; Acoustic scattering; Electrodes; Electron mobility; Equations; Germanium silicon alloys; Impurities; Optical scattering; Phonons; Silicon germanium; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.163490

Filename

163490