• DocumentCode
    947657
  • Title

    Comments on "Electron and Hole Current Characteristics of n-i-p-Type Semiconductor Quantum Dot Transistor

  • Author

    Nadarajah, Saralees

  • Author_Institution
    Manchester Univ., Manchester
  • Volume
    7
  • Issue
    1
  • fYear
    2008
  • Firstpage
    100
  • Lastpage
    101
  • Abstract
    It is pointed out that all of the four integrals used in Fujihashi et al. (see ibid., vol.6, no.3, p.320, 2007) can be reduced to closed forms involving elementary expressions.
  • Keywords
    field effect transistors; quantum well devices; semiconductor quantum dots; closed forms; electron current characteristics; elementary expressions; hole current of characteristics; integrals; n-i-p-type semiconductor quantum dot transistor; Integral equations; Quantum dots; Electron and hole current; Integrals; N i p type; Quantum dot transistor; integrals; n-i-p type; quantum dot transistor;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2007.908489
  • Filename
    4359135
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=947657