• DocumentCode
    948049
  • Title

    Novel f.e.t. power oscillator

  • Author

    Wade, Paul C.

  • Author_Institution
    Microwave Semiconductor Corp., Somerset, USA
  • Volume
    14
  • Issue
    20
  • fYear
    1978
  • Firstpage
    672
  • Lastpage
    674
  • Abstract
    An X-band GaAs f.e.t. oscillator is described that uses a novel configuration, designated `reverse-channel oscillator¿. This provides output powers of up to 0.94 W at 8 GHz and efficiencies as high as 37%. At a higher frequency this configuration provided approximately 300 mW output at 17.5 GHz.
  • Keywords
    electron device noise; field effect transistor circuits; microwave oscillators; solid-state microwave circuits; FET power oscillator; X-band GaAs FET oscillator; reverse channel oscillator;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780451
  • Filename
    4242640
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=948049