High-speed operation of strained InGaAs/InGaAsP MQW lasers under zero-bias condition

Author

Odagawa, Tetsufumi ; Nakajima, Kaoru ; Tanaka, Kazuhiro ; Nobuhara, Hiroyuki ; Inoue, Tadao ; Okazaki, Niro ; Wakao, Kiyohide

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

29

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

1682

Lastpage

1686

Abstract

5 High-speed zero-bias operation of 1.5-μm In_0.62Ga _0.38As/In compressively-strained-MQW (multi-quantum-well) lasers at high temperatures is reported. This is achieved by optimizing the SCH (separate confinement heterostructure) composition to minimize the lasing delay time. Using a laser with an optimized SCH composition, zero bias 1-Gb/s modulation at 70°C with a large eye opening time of 700 ps is demonstrated. In the optimization, strong carrier lifetime dependence on the SCH composition is observed. To see this dependence more precisely, the SCH structure dependence of effective carrier recombination coefficient B, which is an essential parameter for the carrier lifetime, has been experimentally investigated

Keywords

III-V semiconductors; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical modulation; semiconductor lasers; stress effects; 1 Gbit/s; 1.5 micron; 70 degC; In_0.62Ga_0.38As-In; SCH structure dependence; carrier lifetime dependence; composition; compressively strained multi-quantum well lasers; effective carrier recombination coefficient; eye opening time; high speed zero bias operation; lasing delay time; optimization; separate confinement heterostructure; strained InGaAs-InGaAsP lasers; zero-bias condition; Charge carrier lifetime; Circuits; Delay effects; Diode lasers; Epitaxial growth; Indium gallium arsenide; Quantum well devices; Quantum well lasers; Temperature; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.234421

Filename

234421