DocumentCode
948355
Title
Normal incident infrared detector using intervalence band absorption of Si1-xGex/Si multiple quantum wells
Author
Karunasiri, R.P.G. ; Park, Joon S. ; Wang, K.L.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA
Volume
39
Issue
11
fYear
1992
fDate
11/1/1992 12:00:00 AM
Firstpage
2675
Lastpage
2676
Abstract
Summary form only given. The authors report the demonstration of normal incident infrared detection using intervalence-band absorption in Si1-xGex/Si multiple quantum wells. In this case, the transition occurs between different hole bands due to the mixing of the s -like Γ-conduction band Bloch state with p-like hole bands, particularly at large k values. This mechanism is different from the previously reported free-carrier absorption process
Keywords
Ge-Si alloys; conduction bands; infrared detectors; infrared spectra of inorganic solids; semiconductor materials; semiconductor quantum wells; silicon; valence bands; Si1-xGex-Si multiple quantum wells; hole bands; intervalence band absorption; normal incident infrared detection; p-like hole bands; s-like Γ-conduction band Bloch state; Capacitive sensors; Electromagnetic wave absorption; Gallium arsenide; Geometrical optics; Infrared detectors; Nanoscale devices; Optical polarization; Optical waveguides; Probability distribution; Tellurium;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.163550
Filename
163550
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