High temperature (74°C) CW operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrier

Author

Rennie, John ; Okajima, Masaki ; Watanabe, Minoru ; Hatakoshi, Gen-ichi

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

29

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

1857

Lastpage

1862

Abstract

A modified multiple-quantum-barrier structure has been applied to a 630-nm-band laser diode. The result is a laser exhibiting a maximum operating temperature of 74°C and a threshold current of 49 mA. These characteristics correspond to a 22°C increase in the operating temperature and over a 50% decrease in the threshold current, in comparison to an identical laser without a multiple quantum barrier. This is the first time, to the authors´ knowledge, that a significant decrease in the threshold current of a laser has been directly attributed to the influence of a multiple quantum barrier

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; semiconductor lasers; 49 mA; 634 nm; 74 degC; CW operation; InGaAlP; multiple quantum barrier; operating temperature; semiconductor; threshold current; Capacitive sensors; Diode lasers; Gas lasers; Laser theory; Photonic band gap; Semiconductor lasers; Standards development; Temperature; Tensile strain; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.234444

Filename

234444