DocumentCode
949778
Title
High peripheral power density GaAs f.e.t. oscillator
Author
Joshi, J.S. ; Turner, J.A.
Author_Institution
Plessey Research (Caswell) Ltd., Allen Clark Research Centre, Towcester, UK
Volume
15
Issue
5
fYear
1979
Firstpage
163
Lastpage
164
Abstract
Peripheral power density (p.p.d.), i.e. the output power per Unit gate width is defined as a figure of merit for GaAs f.e.t. oscillators. An X-band oscillator circuit using series and shunt feedback is described and its performance characteristies indicated. It is shown that this GaAs f.e.t. oscillator circuit configuration has the highest peripheral power density.
Keywords
field effect transistor circuits; gallium arsenide; microwave oscillators; solid-state microwave circuits; GaAs FET oscillators; SHF; X-band oscillator circuit; microwave oscillators; performance characteristics; peripheral power density; series and shunt feedback;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790116
Filename
4243035
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