• DocumentCode
    950090
  • Title

    Waveguiding and temperature characteristics of threshold current and amplitude-phase coupling coefficient in double-heterostructure lasers

  • Author

    Bogatov, A.P.

  • Author_Institution
    USSR Academy of Sciences, P.N. Lebedev Physical Institute, Moscow, USSR
  • Volume
    135
  • Issue
    3
  • fYear
    1988
  • fDate
    6/1/1988 12:00:00 AM
  • Firstpage
    226
  • Lastpage
    232
  • Abstract
    The problem of the electromagnetic wave propagation in a plane three-layer dielectric waveguide with complex values of the dielectric constant has been solved accurately. The solution of the problem, as applied to InGaAsP injection heterolasers makes it possible to explain the anomalously high temperature sensitivity of threshold current as the result of decreasing the waveguiding. It is evident that such imperfect features of the heterostructure, as the asymmetry or roughness of layers boundaries, worsen the temperature dependence of threshold current, and increase the coefficient of amplitude-phase coupling.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical waveguide theory; semiconductor junction lasers; III-V semiconductor; InGaAsP; InGaAsP injection heterolasers; amplitude-phase coupling coefficient; dielectric constant; double-heterostructure lasers; electromagnetic wave propagation; high temperature sensitivity; layers boundaries; plane three-layer dielectric waveguide; temperature characteristics; threshold current;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings J
  • Publisher
    iet
  • ISSN
    0267-3932
  • Type

    jour

  • DOI
    10.1049/ip-j.1988.0045
  • Filename
    4648725