DocumentCode
950090
Title
Waveguiding and temperature characteristics of threshold current and amplitude-phase coupling coefficient in double-heterostructure lasers
Author
Bogatov, A.P.
Author_Institution
USSR Academy of Sciences, P.N. Lebedev Physical Institute, Moscow, USSR
Volume
135
Issue
3
fYear
1988
fDate
6/1/1988 12:00:00 AM
Firstpage
226
Lastpage
232
Abstract
The problem of the electromagnetic wave propagation in a plane three-layer dielectric waveguide with complex values of the dielectric constant has been solved accurately. The solution of the problem, as applied to InGaAsP injection heterolasers makes it possible to explain the anomalously high temperature sensitivity of threshold current as the result of decreasing the waveguiding. It is evident that such imperfect features of the heterostructure, as the asymmetry or roughness of layers boundaries, worsen the temperature dependence of threshold current, and increase the coefficient of amplitude-phase coupling.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical waveguide theory; semiconductor junction lasers; III-V semiconductor; InGaAsP; InGaAsP injection heterolasers; amplitude-phase coupling coefficient; dielectric constant; double-heterostructure lasers; electromagnetic wave propagation; high temperature sensitivity; layers boundaries; plane three-layer dielectric waveguide; temperature characteristics; threshold current;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
DOI
10.1049/ip-j.1988.0045
Filename
4648725
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