DocumentCode
950137
Title
14-GHz band 1 watt GaAs f.e.t. amplifier
Author
Sone, Jun´ichi ; Takayama, Yoichiro ; Aono, Yoichi
Author_Institution
Nippon Electric Co. Ltd., Central Research Laboratories, Kawasaki, Japan
Volume
15
Issue
7
fYear
1979
Firstpage
212
Lastpage
213
Abstract
A 14.0¿14.5 GHz 1 W amplifier using 0.5 ¿m gate length power GaAs f.e.t.s has been developed. The amplifier, consisting of a cascade of three single-ended stages, realises 13 dB small-signal gain, 1.1 W output-power saturation and 39 dBm third-order intermodulation intercept. The circuit design and the microwave performance of the amplifier are discussed.
Keywords
field effect transistor circuits; microwave amplifiers; power amplifiers; solid-state microwave circuits; 14 GHz band 1 W GaAs FET amplifier; circuit design; microwave performance; power amplifier; three stage cascade;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790149
Filename
4243107
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