CMOS RF and DC reliability subject to hot carrier stress and oxide soft breakdown

Author

Xiao, Enjun ; Yuan, J.S. ; Yang, Hong

Author_Institution

Dept. of Electr. Eng., Univ. of Texas, Arlington, TX, USA

Volume

4

Issue

1

fYear

2004

fDate

3/1/2004 12:00:00 AM

Firstpage

92

Lastpage

98

Abstract

Hot carrier and soft breakdown effects are evaluated experimentally. A methodology to systematically study hot carrier and soft breakdown effects on RF circuits is developed. Device stress measurement and SpectreRF simulation are conducted to evaluate the impact of hot carrier and soft breakdown effects on RF circuits such as low-noise amplifier and voltage-controlled oscillator performances. Two design techniques to build reliable RF circuits are proposed.

Keywords

CMOS integrated circuits; MOSFET; circuit reliability; hot carriers; semiconductor device breakdown; CMOS DC reliability; CMOS RF reliability; MOSFET; SpectreRF simulation; circuit reliability; device stress measurement; dielectric breakdown; hot carrier stress; low-noise amplifier; oxide soft breakdown; voltage-controlled oscillators; wireless communication; Breakdown voltage; Circuits; Degradation; Electric breakdown; Hot carriers; Interface states; MOSFETs; Radio frequency; Thermal stresses; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2004.824365

Filename

1284305