• DocumentCode
    950962
  • Title

    Low-barrier-height epitaxial Ge-GaAs mixer diodes

  • Author

    Christou, Alex ; Davey, J.E. ; Anand, Y.

  • Author_Institution
    Naval Research Laboratory, Washington, USA
  • Volume
    15
  • Issue
    11
  • fYear
    1979
  • Firstpage
    324
  • Lastpage
    325
  • Abstract
    Using a thin Ge-GaAs structure, barrier height lowering of 0.2¿0.3 eV has been attained. These X-band diodes have a noise figure of 6.0¿6.5 dB at 0.75¿1.0 mW of local-oscillator power. The diodes have superior power-handling capability with Pt-Ti-Mo-Au metallisation.
  • Keywords
    Schottky-barrier diodes; gallium arsenide; mixers (circuits); solid-state microwave devices; Pt-Ti-Mo-Au metallisation; Schottky barrier diodes; X-band diodes; barrier height lowering of 0.2 to 0.3 eV; epitaxial Ge-GaAs mixer diodes; low barrier height diodes; microwave diodes; noise figure 6.0 to 6.5 dB at 0.75 to 1.0 mW; power handling capacity; thin Ge-GaAs structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790230
  • Filename
    4243308
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=950962