DocumentCode
950976
Title
11 GHz and 12 GHz multiwatt internal matching for power GaAs f.e.t.s
Author
Takayama, Yoichiro ; Ogawa, Tadayuki ; Aona, Yoichi
Author_Institution
Nippon Electric Co. Ltd., Central Research Laboratories, Kawasaki, Japan
Volume
15
Issue
11
fYear
1979
Firstpage
326
Lastpage
328
Abstract
Multiwatt internal-matching techniques for multichip power GaAs f.e.t.s at 11 GHz and 12 GHz bands have been developed, adopting a lumped-element input circuit and a semidistributed output circuit. The internally matched device for the 11 GHz band exhibits 4 W power output with 3.4 dB associated gain, and the 12 GHz device 3.6 W power output with 3 dB associated gain.
Keywords
field effect transistors; impedance matching; power transistors; solid-state microwave devices; 11 GHz bands; 12 GHz band; 3 dB associated gain; 3.6 W power output; 4 W power output; Ku-band; X-band; impedance matching; internally matched device; microwave transistors; multichip power GaAs FETs; multiwatt internal matching; power transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790232
Filename
4243313
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