• DocumentCode
    951339
  • Title

    Micro-Corrosion of Al-Cu Bonding Pads

  • Author

    Thomas, Simon ; Berg, Howard M.

  • Author_Institution
    Motorola,Phoenix,AZ
  • Volume
    10
  • Issue
    2
  • fYear
    1987
  • fDate
    6/1/1987 12:00:00 AM
  • Firstpage
    252
  • Lastpage
    257
  • Abstract
    Aluminum metallization films with copper additions are found to exhibit highly localized pitting in the presence of moisture. Galvanic action of aluminum surrounding Al2Cu theta phase particles causes localized aluminum corrosion. The thin layer of aluminum hydroxide corrosion product on the bonding pad creates an effective barrier to high-quality wire bonding.
  • Keywords
    Aluminum integrated circuit conductors; Corrosion; Integrated circuit bonding; Aluminum; Assembly; Copper; Corrosion; Metallization; Semiconductor films; Silicon; Surface topography; Wafer bonding; Wire;
  • fLanguage
    English
  • Journal_Title
    Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0148-6411
  • Type

    jour

  • DOI
    10.1109/TCHMT.1987.1134741
  • Filename
    1134741