DocumentCode
951339
Title
Micro-Corrosion of Al-Cu Bonding Pads
Author
Thomas, Simon ; Berg, Howard M.
Author_Institution
Motorola,Phoenix,AZ
Volume
10
Issue
2
fYear
1987
fDate
6/1/1987 12:00:00 AM
Firstpage
252
Lastpage
257
Abstract
Aluminum metallization films with copper additions are found to exhibit highly localized pitting in the presence of moisture. Galvanic action of aluminum surrounding Al2 Cu theta phase particles causes localized aluminum corrosion. The thin layer of aluminum hydroxide corrosion product on the bonding pad creates an effective barrier to high-quality wire bonding.
Keywords
Aluminum integrated circuit conductors; Corrosion; Integrated circuit bonding; Aluminum; Assembly; Copper; Corrosion; Metallization; Semiconductor films; Silicon; Surface topography; Wafer bonding; Wire;
fLanguage
English
Journal_Title
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
0148-6411
Type
jour
DOI
10.1109/TCHMT.1987.1134741
Filename
1134741
Link To Document