An improved parameter extraction method of SiGe HBTs´ substrate network

Author

Chen, Han-Yu ; Chen, Kun-Ming ; Huang, Guo-Wei ; Chang, Chun-Yen

Author_Institution

Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

16

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

321

Lastpage

323

Abstract

In this letter, an improved method for substrate network parameter extraction of SiGe heterojunction bipolar transistors (HBTs) is proposed. It is found that, without taking the intrinsic circuit elements into consideration, the conductance of substrate network will be underestimated while the susceptance of substrate network will be overestimated. Therefore, an iteration procedure is developed to determine the intrinsic circuit elements of SiGe HBTs first. The intrinsic circuit elements are then applied to remove their influence on the substrate network parameter extraction. Compared with the conventional method, the proposed one can avoid some unphysical modeling results and provide reliable substrate network parameters.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; integrated circuit reliability; iterative methods; network parameters; substrates; HBT substrate network; SiGe; SiGe heterojunction bipolar transistors; improved parameter extraction; intrinsic circuit elements; iteration procedure; reliability; substrate network conductance; substrate network parameter; Dielectric substrates; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit reliability; Parameter extraction; Parasitic capacitance; Radio frequency; Silicon devices; Silicon germanium; SiGe HBTs; substrate network parameter extraction;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.875630

Filename

1637482