Polarization-independent strained InGaAs/InGaAlAs quantum-well phase modulators

Author

Chen, Y. ; Zucker, J.E. ; Sauer, N.J. ; Chang, T.Y.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

4

Issue

10

fYear

1992

Firstpage

1120

Lastpage

1123

Abstract

Polarization-independent phase modulation in In/sub 1-x/Ga/sub x/As/InGaAlAs multiple-quantum-well waveguides is demonstrated for the first time. It is shown that by increasing the Ga fraction and hence the tensile strain in the quantum well the electric-field-induced refractive index change in the TM polarization Delta n/sub TM/ can be made to approach that in the TE polarization Delta n/sub TE/. At 1.523 mu m, the ratio Delta n/sub TM// Delta n/sub TE/=1 for x=0.7 with a phase shift coefficient of 17.4 degrees /V-mm was achieved. Polarization independence was maintained over the entire range of reverse bias voltage.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; optical modulation; phase modulation; refractive index; semiconductor quantum wells; 1.523 micron; Ga fraction; IR; InGaAs-InGaAlAs; SQW; TE polarization; TM polarization; electric-field-induced refractive index change; multiple-quantum-well waveguides; phase shift coefficient; polarisation independence; polarisation independent phase modulation; quantum-well phase modulators; reverse bias voltage; semiconductors; tensile strain; Electron beams; Finite difference methods; Indium gallium arsenide; Optical polarization; Optical propagation; Optical waveguides; Phase modulation; Quantum wells; Semiconductor waveguides; Tensile strain;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.163752

Filename

163752