• DocumentCode
    952296
  • Title

    Electron traps in n-InP grown by the synthesis solute-diffusion method

  • Author

    Tsubaki, Kotaro ; Kubota, Eishi ; Sugiyama, Koichi

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    15
  • Issue
    17
  • fYear
    1979
  • Firstpage
    513
  • Lastpage
    514
  • Abstract
    Deep electron trap levels in n-InP single crystals grown by the synthesis solute-diffusion (s.s.d.) method have been studied by d.l.t.s. and admittance-spectroscopy techniques. Three deep trap levels were found and the dominant trap level was shown to have a depth of 0.26 eV and capture cross-section of 0.9 ¿ 1.2 × 10¿12cm2.
  • Keywords
    III-V semiconductors; deep levels; electron traps; indium compounds; III-V semiconductors; admittance spectroscopy; deep electron trap levels; deep level transient spectroscopy; grown by synthesis solute diffusion; n-InP single crystals grown;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790371
  • Filename
    4243489
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=952296