Electrooptic effects in an InGaAs/InAlAs multiquantum well structure

Author

Nishimura, Shinji ; Inoue, Hiroaki ; Sano, Hirohisa ; Ishida, Koji

Author_Institution

Hitachi Ltd., Tokyo, Japan

Volume

4

Issue

10

fYear

1992

Firstpage

1123

Lastpage

1126

Abstract

The field-induced refractive index change of an InGaAs/InAlAs MQW waveguide is examined for various wavelengths and TE/TM modes using a MZ modulator. The quadratic EO coefficients in the MQW waveguide for both TE and TM modes due to quantum confined Stark effect (QCSE) is on the order of 10/sup -18/ (m/sup 2//V/sup 2/), which is dominant compared with the linear EO effect. An effective linear EO effect, however, is significant because of the bias field arising from the built-in potential. This effect is more than one order greater than the conventional laser EO effect, which may suggest new device applications for QCSE.<>

Keywords

III-V semiconductors; Stark effect; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; optical modulation; refractive index; semiconductor quantum wells; InGaAs-InAlAs; MQW waveguide; MZ modulator; Mach-Zehnder interferometer; TE modes; TM modes; bias field; built-in potential; device applications; electro-optical effect; field-induced refractive index change; linear EO effect; multiquantum well structure; quadratic EO coefficients; quantum confined Stark effect; semiconductors; Electrooptic effects; Electrooptic modulators; Electrooptical waveguides; Indium compounds; Indium gallium arsenide; Potential well; Quantum well devices; Refractive index; Tellurium; Waveguide transitions;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.163753

Filename

163753