A new compact model for the avalanche effect in InAlAs/InGaAs HBTs

Author

Weiss, Oliver ; Baureis, Peter ; Kellmann, Nikolai ; Weber, Norbert ; Weigel, Robert

Author_Institution

Fraunhofer Inst. for Integrated Circuits, Erlangen, Germany

Volume

27

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

431

Lastpage

434

Abstract

This letter presents a new compact model for the avalanche effect in InAlAs/InGaAs heterojunction bipolar transistors. Unlike previous models, it is based on the formulation of the avalanche multiplication by Lee (Phys. Rev., vol. 134, p. A761, 1964), which allows the model to be valid for even larger current densities than before. The description of the ionization coefficient takes into account the anomaly of the ionization coefficient of InGaAs at low electric fields. The new model is successfully verified by measurements in a conventional common-base setup.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; InAlAs-InGaAs; avalanche effect; avalanche multiplication; current density; electric fields; heterojunction bipolar transistor; impact ionization; ionization coefficient; Bipolar transistors; Current density; Electrons; Heterojunction bipolar transistors; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Wireless communication; Avalanche effect; InGaAs; avalanche multiplication; heterojunction bipolar transistor (HBT); impact ionization; indium phosphide;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.875724

Filename

1637548