Physical insights on electron mobility in contemporary FinFETs

Author

Chowdhury, M.M. ; Fossum, J.G.

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

Volume

27

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

482

Lastpage

485

Abstract

Calibration of a physics/process-based model for double-gate (DG) MOSFETs to contemporary nanoscale undoped n-channel DG FinFETs reveals that 1) significant densities of source/drain donor dopants readily diffuse to the ultrathin (fin) body/channel, even with relatively long fin extensions, degrading electron mobility at low/moderate levels of inversion-carrier density (N_inv), 2) surface-roughness scattering of electrons is less severe at the {110} silicon-fin surfaces than anticipated, and 3) strong-inversion electron mobility is quite high (e.g., ≅290 cm²/V·s at N_inv=10¹³ cm^-2), being about three times higher than that in contemporary bulk-Si MOSFETs.

Keywords

MOSFET; calibration; electron mobility; elemental semiconductors; silicon; surface roughness; surface scattering; Si; Si-fin dopant diffusion; bulk-Si MOSFET; calibration; double-gate MOSFET; electron mobility; inversion-carrier density; n-channel DG FinFET; nanoscale DG FinFET; silicon-fin surfaces; surface-roughness scattering; ultrathin body transport; undoped DG FinFET; CMOS process; CMOS technology; Calibration; Eigenvalues and eigenfunctions; Electron mobility; FinFETs; MOSFETs; Particle scattering; Physics; Silicon; Si-fin dopant diffusion; surface-roughness scattering; ultrathin (fin) body (UTB) transport;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.874214

Filename

1637564