Anomalous BTI effects in n-type integrated power transistors

Author

Moens, P. ; Cano, J.F. ; Desoete, B.

Author_Institution

AMI Semicond. Belgium BVBA, Oudenaarde, Belgium

Volume

27

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

502

Lastpage

504

Abstract

A novel bias-temperature-instability effect is observed in n-type integrated power transistors. The effect is enhanced by the total internal temperature of the device as well as by the oxide electric field. The total temperature that the device is experiencing is the sum of the ambient temperature and the temperature increase due to power dissipation. The latter is found to be the dominant effect in power transistors integrated in deep submicrometer technologies. A model is presented to calculate the safe operating area of the transistors.

Keywords

power MOSFET; semiconductor device models; semiconductor device testing; BTI effect; bias-temperature-instability effect; deep submicrometer technology; n-type integrated power transistor; oxide electric field; power dissipation; total internal temperature; Automotive applications; Degradation; Hot carriers; MOS devices; Power dissipation; Power generation; Power transistors; Stress; Switches; Temperature; Bias temperature instability (BTI); integrated power; threshold-voltage shift; vertical diffusion metal-oxide semiconductor (VDMOS);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.875723

Filename

1637570