Electrical domains and submillimeter signal generation in AlGaN/GaN superlattices

Author

Gordion, Irina ; Manasson, Alexander ; Litvinov, Vladimir I.

Author_Institution

WaveBand, Sierra Nevada Corp., Irvine, CA, USA

Volume

53

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

1294

Lastpage

1299

Abstract

This paper discusses the feasibility of a terahertz-signal source made of an AlGaN/GaN superlattice. The negative differential conductivity, electrical domain formation, current oscillations, and power efficiency of a perspective source are described. The superlattice geometry and conduction band profile, which are distorted by polarization fields, are related to the oscillation frequency and power efficiency of the device. The optimal Al content, superlattice period, and the parameters of the external circuit that favor submillimeter wave generation are determined.

Keywords

III-V semiconductors; aluminium compounds; current fluctuations; electric domains; gallium compounds; semiconductor superlattices; wide band gap semiconductors; AlGaN-GaN; conduction band profile; current oscillation; electrical domain; negative differential conductivity; power efficiency; submillimeter signal generation; submillimeter wave generation; superlattice geometry; terahertzsignal source; Aluminum gallium nitride; Circuits; Conductivity; Frequency; Gallium nitride; Geometry; Optical polarization; Signal generators; Submillimeter wave devices; Superlattices; Submillimeter wave oscillators; superlattices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.874755

Filename

1637623