• DocumentCode
    953560
  • Title

    Properties of Zirconium Nitride Film Resistors Deposited by Reactive RF Sputtering

  • Author

    Izumi, Katsutoshi ; Masanobu, Doken ; Ariyoshi, Hisashi

  • Author_Institution
    Nippon Telegraph and Telephone Public Corporation
  • Volume
    11
  • Issue
    2
  • fYear
    1975
  • fDate
    6/1/1975 12:00:00 AM
  • Firstpage
    105
  • Lastpage
    107
  • Abstract
    Zirconium nitridefilms were prepared by reactive RF sputtering in argon-nitrogen mixtures, and various electrical properties of these films were investigated. The resistivities of zirconium nitride films varied from 5 X 102to 2 X 104µohm-cm, depending on sputtering pressure. In the resistivity range from 5 X 102to 1.3 X 103µ;ohm-cm, the films , display a reasonably small temperature coefficient of resistance (zero to -200 ppm/°C). After thermal aging, the zirconium nitride film resistors exhibit high stability.
  • Keywords
    Sputtering; Thin-film resistors; Zirconium alloys/compounds, devices; Aging; Conductivity; Displays; Radio frequency; Resistors; Sputtering; Temperature distribution; Thermal resistance; Thermal stability; Zirconium;
  • fLanguage
    English
  • Journal_Title
    Parts, Hybrids, and Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0361-1000
  • Type

    jour

  • DOI
    10.1109/TPHP.1975.1135047
  • Filename
    1135047
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=953560