• DocumentCode
    954251
  • Title

    Ohmic contacts on n-GaAs produced by laser alloying of Ge films

  • Author

    Badertscher, G. ; Salathe, R.P. ; Luthy, W.

  • Author_Institution
    University of Bern, Institute of Applied Physics, Bern, Switzerland
  • Volume
    16
  • Issue
    4
  • fYear
    1980
  • Firstpage
    113
  • Lastpage
    114
  • Abstract
    A Q-switched Nd:y.a.g. laser has been used to form ohmic contacts on n-type GaAs covered with an evaporated film of Ge. The contacts showed good surface morphology with contact resistivities as low as 10¿6 ¿ cm2.
  • Keywords
    III-V semiconductors; gallium arsenide; laser beam applications; ohmic contacts; semiconductor technology; solid lasers; Ge films; Q-switched Nd:YAG laser; contact resistivity 10-6 ohm cm2; laser alloying; n-GaAs; ohmic contacts; surface morphology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800084
  • Filename
    4243879
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=954251