• DocumentCode
    954312
  • Title

    Kink-free narrow-stripe proton-isolated GaAlAs/GaAs injection lasers

  • Author

    Lindstr¿¿m, C. ; Tihanyi, P.

  • Author_Institution
    Institute of Microwave Technology, Stockholm, Sweden
  • Volume
    16
  • Issue
    4
  • fYear
    1980
  • Firstpage
    121
  • Lastpage
    123
  • Abstract
    Totally kink-free and very-narrow-stripe proton-isolated injection lasers are presented. The standard gold-indium metal-contact bonding system has been investigated, and as a result an improved bonding technique is presented. Kink-free lasers with output power up to 20 mW have been accelerated at 80°C ambient for 1000 h without any change in thermal resistance and with an expected lifetime of above 106 h at room temperature.
  • Keywords
    ageing; semiconductor junction lasers; 20 mW output power; 80 degree C ambient temperature; GaAlAs/GaAs injection lasers; accelerated ageing testing; expected lifetime; improved bonding technique; kinkfree DH lasers; life >106 h; narrow strip proton isolated injection lasers; thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800091
  • Filename
    4243886
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=954312