• DocumentCode
    955650
  • Title

    Bipolar transistors with low 1/f noise

  • Author

    Stoisiek, M. ; Wolf, D. ; Werner, W.

  • Author_Institution
    Universitÿt Frankfurt am Main, Institut fÿr Angewandte Physik, Frankfurt am Main, West Germany
  • Volume
    16
  • Issue
    10
  • fYear
    1980
  • Firstpage
    372
  • Lastpage
    373
  • Abstract
    Bipolar transistors employing low concentration emitter diffusion were obtained which show no current gain fall-off at low current levels, as well as significantly reduced 1/f noise. These devices may favourably be applied in low noise amplifiers.
  • Keywords
    bipolar transistors; electron device noise; random noise; 1/f noise; bipolar transistors; current gain fall off; low concentration emitter diffusion;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800264
  • Filename
    4244031
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=955650