• DocumentCode
    955785
  • Title

    Switching phenomena in reverse-biased gold-diffused silicon p+-i-n+diodes

  • Author

    Supadech, S. ; Heng, T.

  • Author_Institution
    King Mongkut´´s Institute of Technology, Bangkok, Thailand
  • Volume
    67
  • Issue
    4
  • fYear
    1979
  • fDate
    4/1/1979 12:00:00 AM
  • Firstpage
    692
  • Lastpage
    693
  • Abstract
    A novel mode of operation for a reverse-biased narrow i-region gold-diffused silicon p+-i-n+diode exhibiting switching negative resistance is reported. The i-region width is in the range of 12-16 µm, and gold has been used to generate deep trapping levels in the i-region.
  • Keywords
    Atomic layer deposition; Conductivity; Diodes; Fabrication; Gold; Impedance; Notice of Violation; P-n junctions; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1979.11304
  • Filename
    1455573
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=955785