• DocumentCode
    955828
  • Title

    Anisotropic magnetoresistance in ferromagnetic 3d alloys

  • Author

    McGuire, T.R. ; Potter, R.I.

  • Author_Institution
    IBM Research Laboratories, Yorktown Heights, N.Y.
  • Volume
    11
  • Issue
    4
  • fYear
    1975
  • fDate
    7/1/1975 12:00:00 AM
  • Firstpage
    1018
  • Lastpage
    1038
  • Abstract
    The anisotropic magnetoresistance effect in 3d transition metals and alloys is reviewed. This effect, found in ferromagnets, depends on the orientation of the magnetization with respect to the electric current direction in the material. At room temperature, the anisotropic resistance in alloys of Ni-Fe and Ni-Co can be greater than 5%. The theoretical basis takes into account spin orbit coupling and d band splitting. Other properties such as permeability, magnetostriction, and Hall voltage have no simple relationship to magnetoresistance. Anisotropic magnetoresistance has an important use as a magnetic field detector for digital recording and magnetic bubbles. Such detectors because of their small size are fabricated using thin film technology. Film studies show that thickness, grain size, and deposition parameters play a significant role in determining the percentage change in magnetoresistance. In general, the change is smaller in films than bulk materials. Several tables and graphs that list bulk and film data are presented.
  • Keywords
    Bibliographies; Magnetic anisotropy; Magnetoresistive materials/devices; Soft magnetic materials/devices; Anisotropic magnetoresistance; Current; Detectors; Electric resistance; Iron alloys; Magnetic films; Magnetic materials; Magnetization; Magnetostriction; Temperature;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1975.1058782
  • Filename
    1058782