Modeling for electron transport in AlGaAs/GaAs/AlGaAs double-heterojunction structures

Author

Tomizawa, Masaaki ; Furuta, Tomofumi ; Yokoyama, Kiyoyuki ; Yoshi, Akira

Author_Institution

NTT LSI Lab., Kanagawa, Japan

Volume

36

Issue

11

fYear

1989

fDate

11/1/1989 12:00:00 AM

Firstpage

2380

Lastpage

2385

Abstract

Two-dimensionally quantized electron transport in modulation-doped double-heterojunction structures is investigated using a Monte Carlo simulation in which the energy quantization in a well is considered. Enhanced low-field mobility in the quantum well is observed with increased carrier density. This results from the reduction of optical phonon scattering rates, which can be attributed to the spread of two-dimensional electron gas. It is also demonstrated that carrier transport related to this enhancement and carrier confinement effectively contribute to device operation in a double-heterojunction FET.

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; carrier mobility; electron-phonon interactions; gallium arsenide; high electron mobility transistors; semiconductor device models; semiconductor quantum wells; 2D quantized electron transport; AlGaAs-GaAs-AlGaAs double heterojunction structure; Monte Carlo simulation; carrier confinement; carrier density; double-heterojunction FET; energy quantization; low-field mobility; mobility enhancement; model; optical phonon scattering rates; quantum well; two-dimensional electron gas; Carrier confinement; Charge carrier density; Electron optics; Epitaxial layers; Gallium arsenide; Optical modulation; Optical scattering; Particle scattering; Phonons; Quantization;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.43657

Filename

43657