• DocumentCode
    956627
  • Title

    GaAs n+-p¿-n+ ballistic structure

  • Author

    Shur, Michael S. ; Eastman, L.F.

  • Author_Institution
    University of Minnesota, Department of Electrical Engineering, Minneapolis, USA
  • Volume
    16
  • Issue
    13
  • fYear
    1980
  • Firstpage
    522
  • Lastpage
    523
  • Abstract
    Potential distribution and I/V characteristics of short n+-p¿-n+ devices are calculated assuming ballistic electron transport (no collisions). The results of the calculation are in good agreement with experimental results for submicrometre GaAs n+-p¿-n+ structures.
  • Keywords
    III-V semiconductors; gallium arsenide; p-n homojunctions; GaAs; I-V characteristics; ballistic electron transport; n+-p--n+ ballistic structure; potential distribution;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800365
  • Filename
    4244135
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=956627