On the Apparent Mobility in Nanometric n-MOSFETs

This letter investigates the definition and determination of mobility in nanometric metal-oxide-semiconductor transistors by means of multisubband Monte Carlo simulations. Our results clearly show that the transport in nano-MOSFETs, even for very small V_DS, is far from being uniform and local. Consequently, the apparent mobility extracted from the experiments is a channel-length-dependent quantity, which is only partly related to the uniform transport mobility. Our study comprises both the electrical and magnetoresistance mobility.