DocumentCode
956942
Title
InGaAsP/InP buried crescent laser emitting at 1.3 ¿m with very low threshold current
Author
Murotani ; Oomura, E. ; Higuchi, H. ; Namizakj, H. ; Susaki, W.
Author_Institution
Mitsubishi Electric Corporation, LSI Research & Development Laboratory, Itami, Japan
Volume
16
Issue
14
fYear
1980
Firstpage
566
Lastpage
568
Abstract
An InGaAsP/InP injection laser is described in which a crescent-shaped InGaAsP active region is completely embedded in InP by the etch-and-fill l.p.c. technique and a double current confinement scheme is incorporated with two reverse-biased p-n junctions on both sides of the active layer. The best laser has the very low threshold current of 28 mA c.w. at room temperature, and shows stable single-mode c.w. operation up to about twice the threshold current.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.3 microns; InGaAsP/InP buried crescent laser; active layer; double current confinement scheme; etch and fill LPE technique; injection laser; reverse biased p-n junctions; stable single mode CW operation; very low threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800393
Filename
4244164
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