Characterization of the Body Node in PD SOI MOSFETs Using Multiport VNA Measurements

This paper describes, for the first time, how the use of multiport vector network analyzer measurements can be exploited to provide a full small-signal characterization of body-contacted partially depleted silicon-on-insulator (SOI) MOSFETs. By combining information that was obtained from both three-port (with one body connection) and four-port (with two body connections) devices, the method successfully determines the value of the body resistance and the intrinsic and extrinsic body capacitances in these devices for any given bias condition. A complete three-port model including the body node is therefore obtained and shown to closely match with ac measurements. The extraction technique is shown to be accurate, straightforward, and time effective, which makes it an ideal characterization tool, for instance, to parameterize compact models or investigate the quality of new SOI technologies.