Ga/sub 0.66/In/sub 0.34/As/GaInAsP/InP tensile-strained single-quantum-well lasers with 70-nm period wire active region

Author

Kudo, Koji ; Nagashima, Yasuaki ; Tamura, Shigeo ; Arai, Shigehisa ; Huang, Yidong ; Suematsu, Yasuharu

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

5

Issue

8

fYear

1993

Firstpage

864

Lastpage

867

Abstract

Fairly low threshold current operation was achieved with Ga/sub 0.66/In/sub 0.34/As/GaInAsP/InP tensile-strained (TS) single-quantum-well (SQW) lasers with 30- approximately 40-nm-wide and 70-nm-period wire active region fabricated by a combination of a wet chemical etching and two-step OMVPE (organometallic vapor phase epitaxy) growth. Threshold current as low as 16 mA and threshold current density of 816 A/cm/sup 2/ were obtained under a room temperature CW condition. In comparing the spontaneous emission peak wavelength of the TS-SQW wire laser with that of the TS-SQW film laser, an approximately 10-meV blue shift of the fundamental energy level was observed in the TS-SQW wire laser.<>

Keywords

III-V semiconductors; etching; gallium arsenide; gallium compounds; indium compounds; laser beams; optical workshop techniques; semiconductor lasers; vapour phase epitaxial growth; 16 mA; 298 K; 30 to 40 nm; 70 nm; Ga/sub 0.66/In/sub 0.34/As-GaInAsP-InP; SQW laser; blue shift; fundamental energy level; organometallic vapor phase epitaxy; room temperature CW condition; spontaneous emission peak wavelength; tensile-strained single-quantum-well lasers; threshold current density; two-step OMVPE; wet chemical etching; Chemical lasers; Indium phosphide; Laser beam cutting; Optical films; Quantum well lasers; Spontaneous emission; Temperature; Threshold current; Wet etching; Wire;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.238236

Filename

238236