Properties of a tunneling injection quantum-well laser: Recipe for ´cold´ device with a large modulation bandwidth

Author

Sun, H.C. ; Davis, L. ; Sethi, S. ; Singh, J. ; Bhattacharya, P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

5

Issue

8

fYear

1993

Firstpage

870

Lastpage

872

Abstract

A quantum-well laser in which electrons are directly injected into the lasing quantum well by resonant tunneling is proposed and demonstrated. The preliminary GaAs-based devices, grown by molecular beam epitaxy have an 80-AA In/sub 0.1/Ga/sub 0.9/As active single quantum well and AlAs tunneling barriers. I/sub th/ is 15 mA in a single-mode ridge device and the differential gain is approximately 2*10/sup -16/ cm/sup -2/. The principle of operation promises a ´cold´ laser at high injection levels, and therefore Auger recombination and chirp are expected to be suppressed. In addition, tunneling of carriers into the active well as the potential to achieve large modulation bandwidths.<>

Keywords

aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor lasers; tunnelling; 15 mA; Auger recombination; In/sub 0.1/Ga/sub 0.9/As-AlAs; carrier tunnelling; cold device; lasing quantum well; modulation bandwidth; molecular beam epitaxy; resonant tunneling; single-mode ridge device; tunneling barriers; tunneling injection quantum-well laser; Bandwidth; Charge carrier processes; Electrons; Gallium arsenide; Molecular beam epitaxial growth; Quantum well lasers; Radiative recombination; Spontaneous emission; Sun; Tunneling;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.238238

Filename

238238