• DocumentCode
    957309
  • Title

    Simple method for evaluating electronic properties at silicon¿sapphire interface

  • Author

    Gentil, P.

  • Author_Institution
    ENSERG, Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, ERA CNRS 659, Grenoble, France
  • Volume
    16
  • Issue
    16
  • fYear
    1980
  • Firstpage
    617
  • Lastpage
    618
  • Abstract
    Electric characteristics of metal-sapphire-silicon transistors are presented. The insulator of the devices is obtained by thinning to 50¿100 ¿m the sapphire substrate of s.o.s. m.o.s. transistors. Devices allow the determination of electronic mobility ¿n = 40 cm2 V¿1 s¿1, in the inversion layer of the Si-sapphire interface.
  • Keywords
    field effect integrated circuits; metal-insulator-semiconductor structures; semiconductor-insulator boundaries; SOS MOS transistors; Si sapphire interface; electronic mobility; electronic properties; inversion layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800428
  • Filename
    4244201
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=957309