• DocumentCode
    958045
  • Title

    High sensitivity InP/InGaAs heterojunction phototransistor

  • Author

    Campbell, Joe C. ; Dentai, A.G. ; Burrus, C.A. ; Ferguson, J.F.

  • Author_Institution
    Bell Laboratories, Holmdel, USA
  • Volume
    16
  • Issue
    18
  • fYear
    1980
  • Firstpage
    713
  • Lastpage
    714
  • Abstract
    Back-illuminated InP/InGaAs heterojunction phototransistors are described. These devices exhibit a low-level optical gain of 40 at 1 nW of incident power which represents a 1000 × improvement in sensitivity over previously reported phototransistors. The maximum gain is 1000 at 5 ¿W input. The response is relatively flat from 0.95 ¿m to 1.65 ¿m wavelength.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; p-n heterojunctions; phototransistors; InP/InGaAs; heterojunction phototransistors; integrated optics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800506
  • Filename
    4244281
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=958045