• DocumentCode
    959013
  • Title

    Modeling of transverse propagation delays in the GaAs/AlGaAs modulation doped heterojunction field effect transistors

  • Author

    Goel, Ashok K. ; Xu, Wei

  • Author_Institution
    Dept. of Electr. Eng., Michigan Technol. Univ., Houghton, MI, USA
  • Volume
    41
  • Issue
    6
  • fYear
    1993
  • Firstpage
    1230
  • Lastpage
    1232
  • Abstract
    A computer-efficient algorithm to calculate the transverse propagation delays in a GaAs/AlGaAs modulation-doped FET (MODFET) is discussed. The model includes the intrinsic as well as the extrinsic parameters of the MODFET. The dependences of these delays on the various MODFET parameters such as its gate length and width and the gate metal resistivity have been studied
  • Keywords
    III-V semiconductors; aluminium compounds; delays; gallium arsenide; high electron mobility transistors; semiconductor device models; GaAs-AlGaAs; MODFET; extrinsic parameters; gate length; gate metal resistivity; gate width; intrinsic parameters; modulation doped heterojunction field effect transistors; transverse propagation delays; Capacitance; Conductivity; Electrodes; Epitaxial layers; Gallium arsenide; HEMTs; Heterojunctions; MODFET circuits; Propagation delay; Propagation losses;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.238551
  • Filename
    238551
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=959013