A generalized integral charge-control relation and its application to compact models for silicon-based HBT´s

Author

Schröter, Michael ; Friedrich, Martin ; Rein, Hans-Martin

Author_Institution

Ruhr Univ., Bochum, Germany

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2036

Lastpage

2046

Abstract

A generalized version of Gummel´s integral charge-control relation (ICCR) is derived, which-in contrast to the classical ICCR-is valid also for HBTs. As a drawback of this generalized ICCR (GICCR) the required separation of the total minority charge into the contributions of the different transistor regions is not possible by measurements. Therefore, a simplified version of the GICCR is presented the parameters of which can be determined experimentally in a simple manner for the operating range of interest. This approach could provide a powerful basis for the development of compact HBT models for circuit simulation. The validity of the different approaches is verified by one- and two-dimensional device simulation for several practical SiGe-base HBTs with different doping profiles and Ge mole fractions

Keywords

Ge-Si alloys; current density; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; solid-state microwave devices; 1D device simulation; Ge mole fractions; HBTs; SiGe; circuit simulation; collector current density; compact models; doping profiles; generalized integral charge-control relation; microwave frequency; total minority charge; two-dimensional device simulation; Charge measurement; Circuit simulation; Current density; Current measurement; Doping profiles; Frequency; Heterojunction bipolar transistors; Semiconductor process modeling; Silicon carbide; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239746

Filename

239746