Blue-green buried-ridge laser diodes

Author

Haase, M.A. ; Baude, P.F. ; Hagedorn, M.S. ; Qui, J. ; DePuydt, J.M. ; Cheng, Hao-Chien ; Guha, Saikat ; Hofler, G.E. ; Wu, B.J.

Author_Institution

3M Centre, St. Paul, MN

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2110

Abstract

Summary form only given. An attempt is being made to develop short wavelength (green and blue) laser diodes with performance suitable for use in optical data storage systems. Buried-ridge laser diodes operating in the blue-green (λ=511 nm) are reported. The starting material is a separate-confinement heterostructure consisting of a strained, pseudomorphic CdZnSe quantum well, ZnSSe light-guiding layers, and MgZnSSe cladding layers. The II-VI layers are grown by MBE (molecular beam epitaxy) and are nominally lattice-matched to the GaAs substrate. Ridges, typically 2 or 3 μm wide, are formed using ion beam etching, and are subsequently buried with ZnS in a self-aligned process that results in a planar surface. Laser diodes with room-temperature pulsed threshold currents of 2.5 mA have been obtained. Single lateral model operation is indicated by the far-field pattern of these devices

Keywords

II-VI semiconductors; cadmium compounds; laser modes; laser transitions; molecular beam epitaxial growth; optical waveguides; semiconductor growth; semiconductor lasers; zinc compounds; 2.5 mA; 511 nm; CdZnSe-ZnSSe-MgZnSSe; GaAs substrate; II-VI layers; MBE; MgZnSSe cladding layers; SCH; ZnS; ZnSSe light-guiding layers; blue-green emission; buried-ridge laser diodes; far-field pattern; ion beam etching; lattice-matched; molecular beam epitaxy; optical data storage systems; planar surface; pseudomorphic CdZnSe quantum well; room-temperature pulsed threshold currents; self-aligned process; separate-confinement heterostructure; short wavelength; single lateral mode operation; Data storage systems; Diode lasers; Etching; Gallium arsenide; Ion beams; Molecular beam epitaxial growth; Optical materials; Optical surface waves; Substrates; Zinc compounds;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239777

Filename

239777