• DocumentCode
    962393
  • Title

    Electron wave interference device with vertical superlattices working in large current region

  • Author

    Tsubaki, Keishi ; Tokura, Yasuhiro ; Fukui, T. ; Saito, Hiroshi ; Susa, N.

  • Author_Institution
    NTT Basic Res. Labs., Tokyo, Japan
  • Volume
    25
  • Issue
    11
  • fYear
    1989
  • fDate
    5/25/1989 12:00:00 AM
  • Firstpage
    728
  • Lastpage
    730
  • Abstract
    An electron wave interference device (wash board transistor), consisting of a modulation-doped Al0.3Ga0.7As/GaAs heterostructure and a 16 nm (AlAs)0.25(GaAs)0.75 vertical superlattice is fabricated. This transistor shows drain current oscillation due to electron wave interference at 4.2 K at large biasing currents. The (AlAs)0.25(GaAs)0.75 vertical superlattice improved the biasing current by about 105 times compared to the previous wash board transistor with a 500 nm tungsten grating gate.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor superlattices; (AlAs) 0.25(GaAs) 0.75; 4.2 K; Al 0.3Ga 0.7As-GaAs; III-V semiconductors; W grating gate; drain current oscillation; electron wave interference device; high speed FET; large current region; modulation-doped heterostructure; vertical superlattice; vertical superlattices; wash board transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890493
  • Filename
    24105
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=962393