DocumentCode
963090
Title
40 Gbit/s silicon optical modulator for highspeed applications
Author
Liao, L. ; Liu, A. ; Basak, J. ; Nguyen, H. ; Paniccia, M. ; Rubin, D. ; Chetrit, Y. ; Cohen, R. ; Izhaky, N.
Author_Institution
Intel Corp., Santa Clara
Volume
43
Issue
22
fYear
2007
Abstract
A high-speed silicon optical modulator based on the free carrier plasma dispersion effect is presented. It is based on carrier depletion of a pn diode embedded inside a silicon-on-insulator waveguide. To achieve high-speed performance, a travelling-wave design is used to allow co-propagation of the electrical and optical signals along the length of the device. The resulting modulator has a 3 dB bandwidth of ~30 GHz and can transmit data up to 40 Gbit/s.
Keywords
elemental semiconductors; high-speed optical techniques; optical dispersion; optical modulation; optical waveguides; silicon; silicon-on-insulator; Si; bit rate 40 Gbit/s; carrier depletion; free carrier plasma dispersion effect; frequency 30 GHz; high-speed optical modulator; pn diode; silicon-on-insulator waveguide;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20072253
Filename
4375448
Link To Document