DocumentCode
963151
Title
The Y-bar switch--A single-level-masking switch
Author
Cohen, M.S. ; Beall, G.W. ; Hsieh, W.J. ; Chang, H.
Author_Institution
IBM T.J. Watson Research Center, Yorktown Hgts, NY
Volume
13
Issue
5
fYear
1977
fDate
9/1/1977 12:00:00 AM
Firstpage
1264
Lastpage
1266
Abstract
The operating margins of the Y-bar switch are analyzed for both the double-level-masking (DLM) and single-level-masking (SLM) implementations. It is found that while both implementations show similar performance, two additional failure modes not seen in the DLM are found in the SLM version: 1. Bubble collapse at the base of the Y bar. 2. Bubble stripout along the conductor. Both of these failure modes are associated with magnetization reversal in the NiFe of the conductor. These failure mechanisms can be mitigated by good geometrical design and by application of an appropriate pulse sequence during operation.
Keywords
Magnetic bubble memories; Magnetic bubble switching; Conductors; Design for manufacture; Failure analysis; Garnets; Gold; Magnetization reversal; Optical devices; Optical switches; Strips; X-ray lithography;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1977.1059525
Filename
1059525
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