DocumentCode
963338
Title
Characterisation of GaInP/GaAs double heterojunction bipolar transistors with different collector designs
Author
Song, Jong-In ; Caneau, Catherine ; Hong, Woo-Pyo
Author_Institution
Bellcore, Red Bank, NJ, USA
Volume
29
Issue
21
fYear
1993
Firstpage
1881
Lastpage
1883
Abstract
The characteristics of InGaP/GaAs:C double-heterojunction bipolar transistors (DHBTs) with different collector layer designs are investigated and compared with those of a single heterojunction bipolar transistor. By inserting highly-doped n-type GaAs and InGaP layers in the collector, current saturation characteristics of a DHBT, comparable to those of a single heterojunction bipolar transistor, are achieved. The breakdown voltage of the DHBT was substantially higher than that of a single-heterojunction bipolar transistor with the same collector doping and thickness.
Keywords
III-V semiconductors; carbon; electric breakdown of solids; gallium arsenide; gallium compounds; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; DHBT; InGaP-GaAs:C; breakdown voltage; collector designs; current saturation characteristics; double heterojunction bipolar transistors; highly-doped n-type GaAs;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931252
Filename
241398
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