• DocumentCode
    963390
  • Title

    High-speed InP/InGaAs HBTs operated at submilliampere collector currents

  • Author

    Nakajima, Hiromasa ; Kurishima, Kenji ; Yamahata, S. ; Kobayashi, Takehiko ; Matsuoka, Yasutaka

  • Author_Institution
    LSI Lab., NTT, Kanagawa, Japan
  • Volume
    29
  • Issue
    21
  • fYear
    1993
  • Firstpage
    1887
  • Lastpage
    1888
  • Abstract
    Extremely small-emitter InP/InGaAs heterojunction bipolar transistors have been fabricated by using a selfalignment technique on MOCVD-grown material. Fabricated devices with a 1*2 mu m2 emitter electrode showed fT exceeding 100 GHz at submilliampere collector currents of IC>0.6 mA. A maximum fT of 163 GHz at IC=2.3 mA ranks with the fT=176 GHz achieved by a simultaneously fabricated 2*20 mu m2 transistor at IC=45 mA.
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; vapour phase epitaxial growth; 0.6 to 2.3 mA; 1 micron; 100 to 163 GHz; 2 micron; InP-InGaAs; MOCVD-grown material; heterojunction bipolar transistors; selfalignment technique; small emitter size; submilliampere collector currents;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931256
  • Filename
    241402
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=963390