DocumentCode
964025
Title
Computer modelling of low-noise indium-phosphide amplifiers
Author
Sitch, J.E.
Author_Institution
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Volume
10
Issue
6
fYear
1974
Firstpage
74
Lastpage
75
Abstract
Computer modelling shows how the use of a cathode contact that restricts the amount of space charge injected into the bulk material can improve the noise performance of a transferred-electron amplifier. An example of an n+-p-n-n+ InP amplifier with a predicted noise measure of 4dB at 17 GHz is presented.
Keywords
electronics applications of computers; microwave amplifiers; semiconductor device models; solid-state microwave devices; transferred electron devices; 17 GHz; InP; bulk effect devices; electronics applications of computers; indium compounds; microwave amplifiers; solid state microwave devices; transferred electron devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19740057
Filename
4245012
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