• DocumentCode
    965643
  • Title

    Effect of leakage current on the power output of s band TRAPATT oscillators

  • Author

    Borrego, J.M. ; Gutmann, R.J. ; Geipel, H.J.

  • Author_Institution
    Rensselaer Polytechnic Institute, Electrophysics & Electronic Engineering Division, Troy, USA
  • Volume
    10
  • Issue
    14
  • fYear
    1974
  • Firstpage
    277
  • Lastpage
    278
  • Abstract
    The effect of externally enhanced leakage current on S band TRAPATT diodes is reported. Without enhanced leakage, the TRAPATT has an effective leakage current density of the order of 0·4 A/cm2. Calculations indicate that the leakage current due to carrier storage provides the electron density for initiating the avalanche process.
  • Keywords
    avalanche diodes; leakage currents; microwave oscillators; solid-state microwave circuits; transit time devices; S-band; TRAPATT devices; avalanche diodes; leakage current effect; leakage currents; solid state microwave oscillators; transit time devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740220
  • Filename
    4245183
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=965643