Scattering matrix simulation of electron transport in model bipolar devices

The scattering matrix approach is a new technique for solving the Boltzmann transport equation in semiconductor devices. The authors extend the technique so that it can treat the very low electric fields and energy barriers often found in devices. Applications of the new technique to advanced device simulation are demonstrated by simulating a model silicon p-n junction and bipolar transistor. The results demonstrate that the scattering matrix approach can resolve the position-dependent distribution function in advanced devices