• DocumentCode
    966170
  • Title

    Epitaxially grown double-drift silicon IMPATT diodes at 60 To 90 GHz

  • Author

    Howard, Ayanna M. ; Smith, Dante J. ; Purcell, J.J.

  • Author_Institution
    Plessey Research (Caswell) Ltd., Allen Clark Research Centre, Towcester, UK
  • Volume
    10
  • Issue
    21
  • fYear
    1974
  • Firstpage
    443
  • Lastpage
    445
  • Abstract
    The characterisation of successively grown n- and p-type epitaxial layers suitable for double-drift 60-90 GHz oscillators is described. Microwave results are reported, and include 0.35 W with 9.2% efficiency at 70 GHz.
  • Keywords
    IMPATT diodes; epitaxial growth; microwave oscillators; semiconductor device manufacture; solid-state microwave circuits; 60 to 90 GHz; IMPATT diodes; epitaxial growth; semiconductor device manufacture; solid state microwave oscillators;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740352
  • Filename
    4245238
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=966170