• DocumentCode
    966785
  • Title

    Electron-drift-velocity measurements in silicon at high temperatures and their empirical relation to electric field

  • Author

    Canali, Carlo ; Majni, G. ; Minder, R. ; Ottaviani, G.

  • Author_Institution
    UniversitÃ\xa0 di Modena, Istituto di Fisica, Modena, Italy
  • Volume
    10
  • Issue
    24
  • fYear
    1974
  • Firstpage
    523
  • Lastpage
    524
  • Abstract
    The drift velocity of electrons in silicon has been measured over a wide range of electric fields (from 3×102 to 6×104 V/cm) at temperatures of up to 430 K. The experimental data have been fitted to a simple formula for the temperatures of interest. The mean-square deviation was, in all cases, less than 3·8%.
  • Keywords
    carrier mobility; elemental semiconductors; high field effects; silicon; Si; carrier mobility; electric field; electron drift velocity; high field effects; high temperatures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740415
  • Filename
    4245304
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=966785